Project 3- Electron transfer at nanostructured semiconductor interfaces.

In this project, we are investigating semiconductor interfaces characterized by a nanoscale, spatial distribution of barrier heights. These studies are enabled by the unique properties of the n-InP | polypyrole interface including near ideal transport properties and a continuously tunable barrier height. Well-defined nanostructured interfaces are fabricated using e-beam lithography to imbed metal nanostuctures into the n-InP | polypyrrole interface. The goals of the work are to (1) to understand charge depletion and charge transport at laterally nanostructured semiconductor interfaces, (2) to evaluate the efficacy of barrier inhomgeneity models in explaining classic anomalies that have plagued the study of putatively uniform semiconductor interfaces, (3) to determine the potential, limitations and interpretation of conventional macroscopic techniques in the characterization of nanostructured interfaces, and (4) to develop current-sensing AFM as a local characterization tool for buried interfaces.

Selected Publications
1. F. E. Jones, B. P.Wood, J.A. Myers, C. Daniels-Hafer, and M. C. Lonergan, J. Appl. Phys. 86, 6431-6441 (1999).
2. M. C. Lonergan and F. E. Jones, J. Chem. Phys. 115, 443-455 (2001).